MMBF4391LT1G, JFETs 30V 10mA

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110 руб.

от 10 шт. — 80 руб.

от 100 шт. — 43 руб.

от 1000 шт. — 27.69 руб.

1 шт. на сумму 110 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8005371604

Артикул: MMBF4391LT1G

Unclassified

Описание Транзистор: N-JFET, полевой, 30В, 0,225Вт, SOT23, 50мА Характеристики

Brand	ON Semiconductor
Configuration	Single
Drain-Source Current At Vgs=0	50 mA to 150 mA
Factory Pack Quantity	3000
Manufacturer	ON Semiconductor
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Packaging	Cut Tape or Reel
Product Category	JFET
Series	MMBF4391L
Transistor Polarity	N-Channel
Type	JFET
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Breakdown Voltage	30 V
Channel Type	N
Idss Drain-Source Cut-off Current	50 to 150mA
Maximum Drain Gate Voltage	30V
Maximum Drain Source Resistance	30 Ω
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	+30 V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Width	1.3mm
Drain-Gate Voltage (Max)	30(V)
Drain-Source Volt (Max)	30(V)
Gate-Source Voltage (Max)	30(V)
Mounting	Surface Mount
Operating Temperature (Max)	150C
Operating Temperature (Min)	-55C
Operating Temperature Classification	Military
Rad Hardened	No
Вид	JFET
Тип	полевой