GAP3SLT33-214, Schottky Diodes & Rectifiers 3300V - 0.3 A SiC Schottky Rectifier

GAP3SLT33-214, Schottky Diodes & Rectifiers 3300V - 0.3 A SiC Schottky Rectifier
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101 шт., срок 5-7 недель
2 900 руб.
от 10 шт.2 510 руб.
от 25 шт.2 260 руб.
от 100 шт.1 987.97 руб.
1 шт. на сумму 2 900 руб.
Плати частями
от 725 руб. × 4 платежа
Альтернативные предложения2
Номенклатурный номер: 8005388174
Артикул: GAP3SLT33-214

Описание

Semiconductors\Discrete Semiconductors\Diodes & Rectifiers\Schottky Diodes & Rectifiers
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Технические параметры

Brand: GeneSiC Semiconductor
Configuration: Single
Factory Pack Quantity: 3000
If - Forward Current: 300 mA
Ifsm - Forward Surge Current: 10 A
Ir - Reverse Current: 100 uA
Manufacturer: GeneSiC Semiconductor
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package/Case: DO-214-2
Pd - Power Dissipation: 25 W
Product Category: Schottky Diodes & Rectifiers
Product Type: Schottky Diodes & Rectifiers
Product: Schottky Silicon Carbide Diodes
Subcategory: Diodes & Rectifiers
Technology: SiC
Type: Schottky Silicon Carbide Diodes
Vf - Forward Voltage: 1.2 V
Vrrm - Repetitive Reverse Voltage: 3.3 kV
Brand GeneSiC Semiconductor
Configuration Single
Factory Pack Quantity 2500
If - Forward Current 0.3 A
Ifsm - Forward Surge Current 10 A
Ir - Reverse Current 100 uA
Manufacturer GeneSiC Semiconductor
Maximum Operating Temperature +175 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Operating Temperature Range -55 C to+175 C
Package / Case DO-214AA
Packaging Cut Tape
Pd - Power Dissipation 25 W
Product Schottky Silicon Carbide Diodes
Product Category Schottky Diodes Rectifiers
RoHS Details
Series GAP3SLT33
Technology SiC
trr - Reverse Recovery time 60 ns
Unit Weight 0.003284 oz
Vf - Forward Voltage 4 V
Vrrm - Repetitive Reverse Voltage 3300 V
Вес, г 0.0931

Техническая документация

Дополнительная информация

Калькуляторы группы «Диоды Шоттки»
Типы корпусов импортных диодов

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