AS4C128M16D3C-93BCN, DRAM DDR3, 2G, 128M x 16, 1.5V, 96-ball FBGA, 2133MHz, Commercial Temp - Tray
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Memory ICs\DRAM
DDR2 SDRAMAlliance Memory DDR2 SDRAM is designed to comply with DDR2 SDRAM key features. Features such as posted CAS# with additive latency, Write latency=Read latency -1, and On-Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in RAS #, CAS# multiplexing style.
Технические параметры
Access Time: | 20 ns |
Brand: | Alliance Memory |
Data Bus Width: | 16 bit |
Factory Pack Quantity: Factory Pack Quantity: | 209 |
Manufacturer: | Alliance Memory |
Maximum Clock Frequency: | 1.066 GHz |
Maximum Operating Temperature: | +95 C |
Memory Size: | 2 Gbit |
Minimum Operating Temperature: | 0 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organization: | 128 M x 16 |
Packaging: | Tray |
Product Category: | DRAM |
Product Type: | DRAM |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 95 mA |
Supply Voltage - Max: | 1.575 V |
Supply Voltage - Min: | 1.425 V |
Type: | SDRAM-DDR3 |
Техническая документация
Datasheet
pdf, 1906 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем