AS4C128M16MD2A-25BIN, DRAM LPDDR2, 2G, 128M X 16, 1.2V, 134ball BGA A-DIE INDUSTRIAL TEMP - Tray

2 560 руб.
от 10 шт.2 260 руб.
от 25 шт.2 060 руб.
1 шт. на сумму 2 560 руб.
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от 640 руб. × 4 платежа
Номенклатурный номер: 8005389159
Артикул: AS4C128M16MD2A-25BIN

Описание

Semiconductors\Memory ICs\DRAM
Low-Power DDR2 SDRAM Alliance Memory Low-Power DDR2 SDRAM are high-speed CMOS and dynamic-access memory internally configured as an 8-bank device. These DDR2 SDRAM feature 4-bit pre-fetch DDR architecture, programmable READ and WRITE latencies, auto Temperature Compensated Self Refresh (TCSR), and clock stop capability. The DDR2 SDRAM reduces the number of input pins in the system by using a double data rate architecture on the Command/Address (CA) bus. This CA bus transmits address, command, and bank information. These DDR2 SDRAM can achieve high-speed operation by using a double data rate architecture on the DQ (bidirectional/differential data bus) pins.

Технические параметры

Access Time: 400 ps
Brand: Alliance Memory
Data Bus Width: 16 bit
Factory Pack Quantity: 171
Manufacturer: Alliance Memory
Maximum Clock Frequency: 400 MHz
Maximum Operating Temperature: +85 C
Memory Size: 2 Gbit
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Organization: 128 M x 16
Package / Case: FBGA-84
Packaging: Tray
Product Category: DRAM
Product Type: DRAM
Subcategory: Memory & Data Storage
Supply Current - Max: 330 mA
Supply Voltage - Max: 1.9 V
Supply Voltage - Min: 1.7 V
Type: SDRAM Mobile-LPDDR2

Техническая документация

Datasheet
pdf, 5166 КБ

Дополнительная информация

Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем