AS4C4M16SA-6BAN, DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive temp - Tray
![AS4C4M16SA-6BAN, DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive temp - Tray](https://static.chipdip.ru/lib/658/DOC046658527.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
780 руб.
от 10 шт. —
630 руб.
1 шт.
на сумму 780 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Semiconductors\Memory ICs\DRAM
AS4C SDRAM Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.
Технические параметры
Access Time: | 5.4 ns |
Brand: | Alliance Memory |
Data Bus Width: | 16 bit |
Factory Pack Quantity: | 348 |
Manufacturer: | Alliance Memory |
Maximum Clock Frequency: | 166 MHz |
Maximum Operating Temperature: | +105 C |
Memory Size: | 64 Mbit |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organisation: | 4 M x 16 |
Package/Case: | TFBGA-54 |
Packaging: | Tray |
Product Category: | DRAM |
Product Type: | DRAM |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 50 mA |
Supply Voltage - Max: | 3.6 V |
Supply Voltage - Min: | 3 V |
Type: | SDRAM |
Вес, г | 2 |
Техническая документация
Datasheet
pdf, 1080 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем