AS4C256M8D3LC-12BCN, DRAM DDR3, 2G, 256M x 8, 1.35V, 78 -balll BGA, 800MHz, COMMERCIAL temp - Tray
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см. техническую документацию
см. техническую документацию
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от 590 руб. × 4 платежа
от 590 руб. × 4 платежа
Описание
Semiconductors\Memory ICs\DRAM
DDR3 Synchronous DRAM Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
Технические параметры
Access Time: | 20 ns |
Brand: | Alliance Memory |
Data Bus Width: | 8 bit |
Factory Pack Quantity: | 210 |
Manufacturer: | Alliance Memory |
Maximum Clock Frequency: | 800 MHz |
Maximum Operating Temperature: | +95 C |
Memory Size: | 2 Gbit |
Minimum Operating Temperature: | 0 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organisation: | 256 M x 8 |
Package/Case: | FBGA-78 |
Packaging: | Tray |
Product Category: | DRAM |
Product Type: | DRAM |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 70 mA |
Supply Voltage - Max: | 1.45 V |
Supply Voltage - Min: | 1.283 V |
Type: | SDRAM-DDR3L |
Техническая документация
Datasheet AS4C256M8D3LC-12BCN
pdf, 1800 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем