AS4C64M4SA-7TCN, DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM

AS4C64M4SA-7TCN, DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
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1 260 руб.
от 10 шт.1 060 руб.
1 шт. на сумму 1 260 руб.
Плати частями
от 315 руб. × 4 платежа
Номенклатурный номер: 8005389303
Артикул: AS4C64M4SA-7TCN

Описание

Semiconductors\Memory ICs\DRAM
AS4C SDRAM Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.

Технические параметры

Access Time: 5.4 ns
Brand: Alliance Memory
Data Bus Width: 4 bit
Factory Pack Quantity: 108
Manufacturer: Alliance Memory
Maximum Clock Frequency: 143 MHz
Maximum Operating Temperature: +70 C
Memory Size: 256 Mbit
Minimum Operating Temperature: 0 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Organisation: 64 M x 4
Package/Case: TSOP-54
Packaging: Tray
Product Category: DRAM
Product Type: DRAM
Subcategory: Memory & Data Storage
Supply Current - Max: 55 mA
Supply Voltage - Max: 3.6 V
Supply Voltage - Min: 3 V
Type: SDRAM

Техническая документация

Datasheet
pdf, 1341 КБ

Дополнительная информация

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