AS4C64M8D1-5BIN, DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Industrial Temp - Tray

AS4C64M8D1-5BIN, DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Industrial Temp - Tray
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см. техническую документацию
1 570 руб.
от 10 шт.1 160 руб.
от 100 шт.1 050 руб.
от 240 шт.907.07 руб.
1 шт. на сумму 1 570 руб.
Плати частями
от 394 руб. × 4 платежа
Номенклатурный номер: 8005389304
Артикул: AS4C64M8D1-5BIN

Описание

Semiconductors\Memory ICs\DRAM
DDR1 Synchronous DRAM Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

Технические параметры

Access Time: 700 ps
Brand: Alliance Memory
Data Bus Width: 8 bit
Factory Pack Quantity: 240
Manufacturer: Alliance Memory
Maximum Clock Frequency: 200 MHz
Maximum Operating Temperature: +85 C
Memory Size: 512 Mbit
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Organisation: 64 M x 8
Package/Case: FBGA-60
Packaging: Tray
Product Category: DRAM
Product Type: DRAM
Subcategory: Memory & Data Storage
Supply Current - Max: 130 mA
Supply Voltage - Max: 2.7 V
Supply Voltage - Min: 2.3 V
Type: SDRAM-DDR

Техническая документация

Datasheet
pdf, 1361 КБ

Дополнительная информация

Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем