AS6C8008-55BIN, SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
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см. техническую документацию
см. техническую документацию
2 130 руб.
от 10 шт. —
1 870 руб.
от 25 шт. —
1 640 руб.
от 100 шт. —
1 377.32 руб.
1 шт.
на сумму 2 130 руб.
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от 534 руб. × 4 платежа
от 534 руб. × 4 платежа
Описание
Semiconductors\Memory ICs\SRAM
Low Power CMOS SRAM Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8.388.608-bit device organized as 1.048.576 words by 8-bits. AS6C1616 is a 16.777.216-bit device organized as 1.048.576 words by 16-bits. AS6C6264A is a 65.536-bit device organized as 8.192 words by 8 bits. AS6C62256 is a 262.144-bit device organized as 32.768 words by 8-bits. Available in different packages/cases.
Технические параметры
Access Time: | 55 ns |
Brand: | Alliance Memory |
Factory Pack Quantity: | 480 |
Interface Type: | Parallel |
Manufacturer: | Alliance Memory |
Maximum Operating Temperature: | +85 C |
Memory Size: | 8 Mbit |
Memory Type: | SDR |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organisation: | 1 M x 8 |
Package/Case: | TFBGA-44 |
Packaging: | Tray |
Product Category: | SRAM |
Product Type: | SRAM |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 60 mA |
Supply Voltage - Max: | 5.5 V |
Supply Voltage - Min: | 2.7 V |
Type: | Asynchronous |
Вес, г | 3 |
Техническая документация
Datasheet
pdf, 763 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем