AS6C8008-55BIN, SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM

AS6C8008-55BIN, SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
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см. техническую документацию
2 130 руб.
от 10 шт.1 870 руб.
от 25 шт.1 640 руб.
от 100 шт.1 377.32 руб.
1 шт. на сумму 2 130 руб.
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от 534 руб. × 4 платежа
Номенклатурный номер: 8005389356
Артикул: AS6C8008-55BIN

Описание

Semiconductors\Memory ICs\SRAM
Low Power CMOS SRAM Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8.388.608-bit device organized as 1.048.576 words by 8-bits. AS6C1616 is a 16.777.216-bit device organized as 1.048.576 words by 16-bits. AS6C6264A is a 65.536-bit device organized as 8.192 words by 8 bits. AS6C62256 is a 262.144-bit device organized as 32.768 words by 8-bits. Available in different packages/cases.

Технические параметры

Access Time: 55 ns
Brand: Alliance Memory
Factory Pack Quantity: 480
Interface Type: Parallel
Manufacturer: Alliance Memory
Maximum Operating Temperature: +85 C
Memory Size: 8 Mbit
Memory Type: SDR
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Organisation: 1 M x 8
Package/Case: TFBGA-44
Packaging: Tray
Product Category: SRAM
Product Type: SRAM
Subcategory: Memory & Data Storage
Supply Current - Max: 60 mA
Supply Voltage - Max: 5.5 V
Supply Voltage - Min: 2.7 V
Type: Asynchronous
Вес, г 3

Техническая документация

Datasheet
pdf, 763 КБ

Дополнительная информация

Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем