IRS2184STRPBF, Gate Drivers Hlf Brdg Drvr Soft Trn On Sngl 400ns
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Описание
Power\Power Management ICs\Gate Drivers
EiceDRIVER™ Gate Driver ICsInfineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That"s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.
Технические параметры
Brand: | Infineon Technologies |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 35 ns |
Features: | Synchronous |
Logic Type: | CMOS, TTL |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +125 C |
Maximum Turn-Off Delay Time: | 270 ns |
Maximum Turn-On Delay Time: | 680 ns |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Drivers: | 2 Driver |
Number of Outputs: | 2 Output |
Operating Supply Current: | 1.6 mA |
Output Current: | 1.9 A |
Package / Case: | SOIC-8 |
Pd - Power Dissipation: | 625 mW |
Product Category: | Gate Drivers |
Product Type: | Gate Drivers |
Product: | IGBT, MOSFET Gate Drivers |
Propagation Delay - Max: | 900 ns |
Rise Time: | 60 ns |
Subcategory: | PMIC-Power Management ICs |
Supply Voltage - Max: | 20 V |
Supply Voltage - Min: | 10 V |
Technology: | Si |
Type: | Half-Bridge |
Automotive | No |
Bridge Type | Half Bridge |
Driver Configuration | Inverting|Non-Inverting |
Driver Type | High and Low Side |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
High and Low Sides Dependency | Synchronous |
Input Logic Compatibility | CMOS|LSTTL|3.3V(Min)|5V |
Latch-Up Proof | Yes |
Lead Shape | Gull-wing |
Maximum Fall Time (ns) | 35 |
Maximum Operating Supply Voltage (V) | 20 |
Maximum Operating Temperature (°C) | 125 |
Maximum Power Dissipation (mW) | 625 |
Maximum Propagation Delay Time (ns) | 900 |
Maximum Rise Time (ns) | 60 |
Maximum Turn-Off Delay Time (ns) | 40 |
Maximum Turn-On Delay Time (ns) | 90 |
Minimum Operating Supply Voltage (V) | 10 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Surface Mount |
Number of Drivers | 2 |
Number of Outputs | 2 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Process Technology | CMOS |
Reference Voltage (V) | 600(Max) |
Special Features | Under Voltage Lockout |
Standard Package Name | SO |
Supplier Package | SOIC N |
Type | IGBT|MOSFET |
Typical Input High Threshold Voltage (V) | 2.5(Min) |
Typical Input Low Threshold Voltage (V) | 0.8(Max) |
Fall Time | 35ns |
Output Current | 1.9 A |
Package Type | SOIC |
Supply Voltage | 20V |
Вес, г | 0.15 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем