IRS2334STRPBF, Gate Drivers Gen5 HVIC 600V 35A 3 Phase Gt Drvr
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Описание
Power\Power Management ICs\Gate Drivers
EiceDRIVER™ Gate Driver ICs Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.
Технические параметры
Brand: | Infineon Technologies |
Factory Pack Quantity: | 1000 |
Fall Time: | 50 ns |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +125 C |
Maximum Turn-Off Delay Time: | 530 ns |
Maximum Turn-On Delay Time: | 530 ns |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Drivers: | 3 Driver |
Number of Outputs: | 6 Output |
Operating Supply Current: | 300 uA |
Output Current: | 200 mA |
Package/Case: | SOIC-20 |
Pd - Power Dissipation: | 1.14 W |
Product Category: | Gate Drivers |
Product Type: | Gate Drivers |
Product: | Half-Bridge Drivers |
Rise Time: | 125 ns |
Subcategory: | PMIC-Power Management ICs |
Supply Voltage - Max: | 20 V |
Supply Voltage - Min: | 10 V |
Technology: | Si |
Type: | High-Side, Low-Side |
Вес, г | 0.8 |
Техническая документация
Datasheet
pdf, 1095 КБ
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем