IRS2334STRPBF, Gate Drivers Gen5 HVIC 600V 35A 3 Phase Gt Drvr

IRS2334STRPBF, Gate Drivers Gen5 HVIC 600V 35A 3 Phase Gt Drvr
Изображения служат только для ознакомления,
см. техническую документацию
800 руб.
от 10 шт.640 руб.
от 100 шт.480 руб.
от 250 шт.451.98 руб.
Добавить в корзину 1 шт. на сумму 800 руб.
Плати частями
от 0 руб. × 4 платежа
Номенклатурный номер: 8005402344
Артикул: IRS2334STRPBF

Описание

Power\Power Management ICs\Gate Drivers
EiceDRIVER™ Gate Driver ICs Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

Технические параметры

Brand: Infineon Technologies
Factory Pack Quantity: 1000
Fall Time: 50 ns
Manufacturer: Infineon
Maximum Operating Temperature: +125 C
Maximum Turn-Off Delay Time: 530 ns
Maximum Turn-On Delay Time: 530 ns
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Number of Drivers: 3 Driver
Number of Outputs: 6 Output
Operating Supply Current: 300 uA
Output Current: 200 mA
Package/Case: SOIC-20
Pd - Power Dissipation: 1.14 W
Product Category: Gate Drivers
Product Type: Gate Drivers
Product: Half-Bridge Drivers
Rise Time: 125 ns
Subcategory: PMIC-Power Management ICs
Supply Voltage - Max: 20 V
Supply Voltage - Min: 10 V
Technology: Si
Type: High-Side, Low-Side
Вес, г 0.8

Техническая документация

Datasheet
pdf, 1095 КБ

Дополнительная информация

Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем