MMBTA06_R1_00001, Bipolar Transistors - BJT NPNANDPNPHIGHVO LTAGETRANSISTOR VCE80V IC500mA SOT-23

Изображения служат только для ознакомления,
см. техническую документацию

8494 шт., срок 5-7 недель

46 руб.

от 10 шт. — 33 руб.

от 100 шт. — 20 руб.

от 1000 шт. — 8.46 руб.

1 шт. на сумму 46 руб.

Плати частями
от 0 руб. × 4 платежа

Альтернативные предложения3

Номенклатурный номер: 8005433204

Артикул: MMBTA06_R1_00001

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

80V 225mW 100@100mA,1V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS

Brand:	Panjit
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	80 V
Collector-Emitter Saturation Voltage:	250 mV
Configuration:	Single
Continuous Collector Current:	500 mA
DC Collector/Base Gain hFE Min:	100
Emitter- Base Voltage VEBO:	4 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Panjit
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Pd - Power Dissipation:	225 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Collector Current (Ic)	500mA
Collector Cut-Off Current (Icbo)	100nA
Collector-Emitter Breakdown Voltage (Vceo)	80V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	250mV@10mA, 100mA
DC Current Gain (hFE@Ic,Vce)	100@100mA, 1V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	225mW
Transistor Type	NPN
Transition Frequency (fT)	100MHz
Вес, г	0.01