APT95GR65B2, IGBTs IGBT MOS 8 650 V 95 A TO-247 MAX
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
2 410 руб.
1 шт.
на сумму 2 410 руб.
Плати частями
от 604 руб. × 4 платежа
от 604 руб. × 4 платежа
Описание
Unclassified
Trans IGBT Chip N-CH 650V 208A 892000mW 3-Pin(3+Tab) T-MAX Tube
Технические параметры
Brand: | Microchip Technology |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 2.6 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 208 A |
Continuous Collector Current Ic Max: | 208 A |
Factory Pack Quantity: | 1 |
Gate-Emitter Leakage Current: | +/-250 nA |
Manufacturer: | Microchip |
Maximum Gate Emitter Voltage: | -30 V, 30 V |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package/Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 892 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Current - Collector (Ic) (Max) | 208A |
Current - Collector Pulsed (Icm) | 400A |
Gate Charge | 420nC |
IGBT Type | NPT |
Input Type | Standard |
Manufacturer | Microsemi Corporation |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-247-3 |
Packaging | Tube |
Part Status | Active |
Power - Max | 892W |
Series | - |
Supplier Device Package | T-MAXв(ў(B2) |
Switching Energy | 3.12mJ(on), 2.55mJ(off) |
Td (on/off) @ 25В°C | 29ns/226ns |
Test Condition | 433V, 95A, 4.3 Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 95A |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Вес, г | 6.81 |
Техническая документация
Datasheet APT45GR65B
pdf, 183 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов