CSD83325L, MOSFET 12-V, N channel NexFET power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection 6-PICOSTAR
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
NexFET™ Power MOSFETs Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 589 ns |
| Forward Transconductance - Min: | 36 S |
| Id - Continuous Drain Current: | 8 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | PICOSTAR-6 |
| Pd - Power Dissipation: | 2.3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10.9 nC |
| Rds On - Drain-Source Resistance: | 11.9 mOhms |
| Rise Time: | 353 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 711 ns |
| Typical Turn-On Delay Time: | 205 ns |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 750 mV |
| Brand | Texas Instruments |
| Configuration | Dual |
| Factory Pack Quantity | 250 |
| Fall Time | 589 ns |
| Forward Transconductance - Min | 36 S |
| Height | 0.2 mm |
| Id - Continuous Drain Current | 8 A |
| Length | 2.2 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | BGA-6 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 2.3 W |
| Product | Power MOSFET |
| Product Category | MOSFET |
| Qg - Gate Charge | 8.4 nC |
| Rds On - Drain-Source Resistance | 5.9 mOhms |
| Rise Time | 353 ns |
| RoHS | Details |
| Series | CSD83325L |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 711 ns |
| Typical Turn-On Delay Time | 205 ns |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs th - Gate-Source Threshold Voltage | 0.95 V |
| Width | 1.15 mm |
| Вес, г | 0.07 |
Техническая документация
Datasheet
pdf, 1138 КБ
Datasheet CSD83325LT
pdf, 1222 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
