2N3392 PBFREE, Bipolar Transistors - BJT NPN 25V 500mA BULK HFE/300

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16149 шт., срок 5-7 недель

140 руб.

от 10 шт. — 130 руб.

от 100 шт. — 90 руб.

от 500 шт. — 79.58 руб.

1 шт. на сумму 140 руб.

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Номенклатурный номер: 8005473776

Артикул: 2N3392 PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 25V 120MHz Through Hole TO-92

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	25 V
Collector- Emitter Voltage VCEO Max:	25 V
Configuration:	Single
Continuous Collector Current:	100 mA
DC Collector/Base Gain hfe Min:	150
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	120 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	100 nA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92
Packaging:	Bulk
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 2mA, 4.5V
ECCN	EAR99
Frequency - Transition	120MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Вес, г	0.45