IXXR110N65B4H1, IGBTs 650V/150A TRENCH IGBT GENX4 XPT

IXXR110N65B4H1, IGBTs 650V/150A TRENCH IGBT GENX4 XPT
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см. техническую документацию
6 710 руб.
от 10 шт.5 300 руб.
от 30 шт.4 610 руб.
от 60 шт.4 455.10 руб.
1 шт. на сумму 6 710 руб.
Плати частями
от 1 679 руб. × 4 платежа
Номенклатурный номер: 8005506870
Артикул: IXXR110N65B4H1
Бренд: Ixys Corporation

Описание

Unclassified
650V XPT™ High Speed Trench IGBTs IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of +110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions - a 10μs Short Circuit Safe Operating Area (SCSOA).

Технические параметры

Brand: IXYS
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 2.1 V
Configuration: Single
Continuous Collector Current at 25 C: 165 A
Continuous Collector Current Ic Max: 70 A
Factory Pack Quantity: 30
Gate-Emitter Leakage Current: 100 nA
Manufacturer: IXYS
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Pd - Power Dissipation: 455 W
Product Category: IGBTs
Product Type: IGBT Transistors
Subcategory: IGBTs
Technology: Si
Вес, г 6

Техническая документация

Datasheet
pdf, 294 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов