AS4C64M8D1-5BIN
![AS4C64M8D1-5BIN](https://static.chipdip.ru/lib/102/DOC027102115.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 680 руб.
от 10 шт. —
1 360 руб.
от 25 шт. —
1 300 руб.
от 40 шт. —
1 198.14 руб.
1 шт.
на сумму 1 680 руб.
Плати частями
от 420 руб. × 4 платежа
от 420 руб. × 4 платежа
Описание
DDR1 Synchronous DRAM Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Технические параметры
Access Time: | 700 ps |
Brand: | Alliance Memory |
Data Bus Width: | 8 bit |
Factory Pack Quantity: | 240 |
Manufacturer: | Alliance Memory |
Maximum Clock Frequency: | 200 MHz |
Maximum Operating Temperature: | +85 C |
Memory Size: | 512 Mbit |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organisation: | 64 M x 8 |
Package/Case: | FBGA-60 |
Packaging: | Tray |
Product Category: | DRAM |
Product Type: | DRAM |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 130 mA |
Supply Voltage - Max: | 2.7 V |
Supply Voltage - Min: | 2.3 V |
Type: | SDRAM-DDR |
Техническая документация
Datasheet
pdf, 1361 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем