2SC1815 PBFREE

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4168 шт., срок 6-8 недель

280 руб.

от 10 шт. — 220 руб.

от 100 шт. — 159 руб.

от 2500 шт. — 87.01 руб.

1 шт. на сумму 280 руб.

Плати частями
от 0 руб. × 4 платежа

Альтернативные предложения2

Номенклатурный номер: 8005857212

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - Single

Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 400mW

Current - Collector (Ic) (Max)	150mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 2mA, 6V
ECCN	EAR99
Frequency - Transition	80MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Package	Bulk
Power - Max	400mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	250 mV
Configuration:	Single
Continuous Collector Current:	150 mA
DC Collector/Base Gain hfe Min:	70
DC Current Gain hFE Max:	700
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	80 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	150 mA
Maximum Operating Temperature:	+125 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	400 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN

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