CSD86350Q5DT

Изображения служат только для ознакомления,
см. техническую документацию

920 руб.

от 10 шт. — 710 руб.

от 100 шт. — 503 руб.

от 250 шт. — 474.30 руб.

Добавить в корзину 1 шт. на сумму 920 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8005871829

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	250
Fall Time:	2.3 ns, 21 ns
Forward Transconductance - Min:	103 S, 132 S
Id - Continuous Drain Current:	40 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+125 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	SON-8
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	13 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	10.7 nC, 25 nC
Rds On - Drain-Source Resistance:	5 mOhms, 1.1 mOhms
Rise Time:	21 ns, 23 ns
Series:	CSD86350Q5D
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	9 ns, 24 ns
Typical Turn-On Delay Time:	8 ns, 9 ns
Vds - Drain-Source Breakdown Voltage:	25 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV

pdf, 1571 КБ

Мы рекомендуем