2N5551 TIN/LEAD

2210 шт., срок 6-8 недель

220 руб.

от 10 шт. — 180 руб.

от 100 шт. — 121 руб.

от 500 шт. — 92.88 руб.

1 шт. на сумму 220 руб.

Плати частями
от 0 руб. × 4 платежа

Альтернативные предложения1

Номенклатурный номер: 8005912981

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - Single

Биполярный (BJT) транзистор NPN 160V 600mA 300MHz 625mW Through Hole TO-92

Current - Collector (Ic) (Max)	600mA
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
ECCN	EAR99
Frequency - Transition	300MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Power - Max	625mW
REACH Status	REACH Unaffected
RoHS Status	RoHS non-compliant
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	160V