CSD17308Q3T
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310 руб.
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230 руб.
от 100 шт. —
165 руб.
от 250 шт. —
162.89 руб.
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Описание
Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single
N-канал 30 В, 14 А (Ta), 44 А (Tc) 2,7 Вт (Ta), 28 Вт (Tc) Поверхностный монтаж 8-VSON-CLIP (3,3x3,3)
Технические параметры
Base Product Number | CSD17308 -> |
Current - Continuous Drain (Id) @ 25В°C | 14A (Ta), 44A (Tc) |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 4.5V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 15V |
Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | 8-PowerTDFN |
Power Dissipation (Max) | 2.7W (Ta), 28W (Tc) |
Rds On (Max) @ Id, Vgs | 10.3mOhm @ 10A, 8V |
REACH Status | REACH Affected |
RoHS Status | ROHS3 Compliant |
Series | NexFETв„ў -> |
Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | +10V, -8V |
Vgs(th) (Max) @ Id | 1.8V @ 250ВµA |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 250 |
Fall Time: | 2.3 ns |
Forward Transconductance - Min: | 37 S |
Id - Continuous Drain Current: | 60 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 28 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 3.9 nC |
Rds On - Drain-Source Resistance: | 11.8 mOhms |
Rise Time: | 5.7 ns |
Series: | CSD17308Q3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 9.9 ns |
Typical Turn-On Delay Time: | 4.5 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -10 V, +10 V, -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
Channel Type | N |
Maximum Continuous Drain Current | 14 A |
Maximum Drain Source Voltage | 30 V |
Package Type | VSON-CLIP |
Automotive | No |
Channel Mode | Enhancement |
Configuration | Single Quad Drain Triple Source |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | No Lead |
Maximum Continuous Drain Current (A) | 50 |
Maximum Drain Source Resistance (mOhm) | 10.3@8V |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | 10 |
Maximum Gate Threshold Voltage (V) | 1.8 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 2700 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Process Technology | NexFET |
Product Category | Power MOSFET |
Standard Package Name | SON |
Supplier Package | VSON-CLIP EP |
Typical Fall Time (ns) | 2.3 |
Typical Gate Charge @ Vgs (nC) | 3.9@4.5V |
Typical Gate Threshold Voltage (V) | 1.3 |
Typical Gate to Drain Charge (nC) | 0.8 |
Typical Input Capacitance @ Vds (pF) | 540@15V |
Typical Rise Time (ns) | 5.7 |
Typical Turn-Off Delay Time (ns) | 9.9 |
Typical Turn-On Delay Time (ns) | 4.5 |
Вес, г | 0.07 |
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов