2N5770 PBFREE

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47207 шт., срок 6-8 недель

97 руб.

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от 10 шт. — 74 руб.

от 100 шт. — 41 руб.

от 500 шт. — 35.37 руб.

2 шт. на сумму 194 руб.

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Альтернативные предложения1

Номенклатурный номер: 8005970157

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - RF

РЧ транзистор NPN 15V 50mA 900MHz 625mW Through Hole TO-92

Current - Collector (Ic) (Max)	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 8mA, 1V
ECCN	EAR99
Frequency - Transition	900MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Noise Figure (dB Typ @ f)	6dB @ 60MHz
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Power - Max	625mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	30 V
Collector- Emitter Voltage VCEO Max:	15 V
Collector-Emitter Saturation Voltage:	400 mV
Configuration:	Single
Continuous Collector Current:	50 mA
DC Collector/Base Gain hfe Min:	50
DC Current Gain hFE Max:	200
Emitter- Base Voltage VEBO:	3 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	900 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	50 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92
Packaging:	Bulk
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Вес, г	0.45