2N5172 PBFREE

Изображения служат только для ознакомления,
см. техническую документацию

4245 шт., срок 6-8 недель

190 руб.

от 10 шт. — 160 руб.

от 100 шт. — 99 руб.

от 2500 шт. — 50.78 руб.

1 шт. на сумму 190 руб.

Плати частями
от 0 руб. × 4 платежа

Альтернативные предложения1

Номенклатурный номер: 8006149443

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - Single

Биполярный (BJT) транзистор NPN 25V 100mA 200MHz 625mW Through Hole TO-92

Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 10V
ECCN	EAR99
Frequency - Transition	200MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Power - Max	625mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)	25V
Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	25 V
Collector- Emitter Voltage VCEO Max:	25 V
Collector-Emitter Saturation Voltage:	250 mV
Configuration:	Single
Continuous Collector Current:	100 mA
DC Collector/Base Gain hfe Min:	100
DC Current Gain hFE Max:	500
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	200 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92
Packaging:	Bulk
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN