CSD17578Q5AT
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см. техническую документацию
см. техническую документацию
300 руб.
от 10 шт. —
220 руб.
от 100 шт. —
161 руб.
от 250 шт. —
158.98 руб.
1 шт.
на сумму 300 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single
N-канал 30 В, 25 А (Ta), 3,1 Вт (Ta), 42 Вт (Tc), поверхностный монтаж 8-VSONP (5x6)
Технические параметры
| Base Product Number | CSD17578 -> |
| Current - Continuous Drain (Id) @ 25В°C | 25A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22.3nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 15V |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3.1W (Ta), 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 10A, 10V |
| REACH Status | REACH Affected |
| RoHS Status | ROHS3 Compliant |
| Series | NexFETв„ў -> |
| Supplier Device Package | 8-VSONP (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 1.9V @ 250ВµA |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 250 |
| Fall Time: | 2 ns |
| Forward Transconductance - Min: | 44 S |
| Id - Continuous Drain Current: | 25 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 42 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10.3 nC |
| Rds On - Drain-Source Resistance: | 7.9 mOhms |
| Rise Time: | 22 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 17 ns |
| Typical Turn-On Delay Time: | 4 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
Техническая документация
Datasheet CSD17578Q5A
pdf, 379 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые с управляющим PN-переходом (JFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
