BGA614H6327XTSA1, RF Amplifier RF SILICON MMIC
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см. техническую документацию
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430 руб.
от 10 шт. —
340 руб.
от 100 шт. —
287 руб.
от 250 шт. —
241.77 руб.
1 шт.
на сумму 430 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
RF & Wireless\RF Integrated Circuits\RF Amplifier
Infineon’s range of RF Low Noise Amplifier (LNA) covers MMIC, GPS, Gain and PCS as well as Broadband types and Glonass front end modules.
Технические параметры
| Brand: | Infineon Technologies |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain: | 19 dB |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| NF - Noise Figure: | 2 dB |
| OIP3 - Third Order Intercept: | 25 dBm |
| Operating Frequency: | 0 Hz to 2.4 GHz |
| Operating Supply Current: | 40 mA |
| Operating Supply Voltage: | 5 V |
| P1dB - Compression Point: | 12 dBm |
| Package / Case: | SOT-343-4 |
| Part # Aliases: | BGA 614 H6327 SP000753512 |
| Product Category: | RF Amplifier |
| Product Type: | RF Amplifier |
| Series: | BGA614 |
| Subcategory: | Wireless & RF Integrated Circuits |
| Technology: | SiGe |
| Test Frequency: | 1 GHz |
| Type: | Driver Amplifiers |
| Amplifier Type | Broadband |
| Maximum Operating Frequency | 2 GHz |
| Maximum Operating Supply Voltage | 3 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Surface Mount |
| Number of Channels per Chip | 1 |
| Package Type | SOT-343 |
| Pin Count | 4 |
| Typical Noise Figure | 2.1dB |
| Typical Output Power | 12dBm |
| Typical Power Gain | 19.8 dB |
| Width | 1.25mm |
| Вес, г | 0.2 |
Техническая документация
Дополнительная информация
Калькуляторы группы «ВЧ усилители»
Типы корпусов импортных микросхем
