C4D02120E, Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2A
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42775 шт., срок 5-7 недель
580 руб.
от 10 шт. —
460 руб.
от 75 шт. —
341 руб.
от 525 шт. —
270.50 руб.
1 шт.
на сумму 580 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\Diodes & Rectifiers\Schottky Diodes & Rectifiers
Silicon Carbide 1200V MOSFETs & DiodesWolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for use in high-power applications. The 1200V SiC MOSFETs feature stable R ds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as they offer a 15V gate drive. The 1200V SiC MOSFETs provide improved system-level efficiency with lower switching and conduction losses and improved system-level power density. Increased linear COSS behavior can also enhance performance for soft switching applications.
Технические параметры
| Brand: | Wolfspeed |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 75 |
| If - Forward Current: | 2 A |
| Ifsm - Forward Surge Current: | 18.8 A |
| Ir - Reverse Current: | 50 uA |
| Manufacturer: | Wolfspeed |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-2(DPAK) |
| Packaging: | Tube |
| Pd - Power Dissipation: | 40.5 W |
| Product Category: | Schottky Diodes & Rectifiers |
| Product Type: | Schottky Diodes & Rectifiers |
| Product: | Schottky Silicon Carbide Diodes |
| Subcategory: | Diodes & Rectifiers |
| Technology: | SiC |
| Vf - Forward Voltage: | 1.8 V |
| Vrrm - Repetitive Reverse Voltage: | 1.2 kV |
| Diode Configuration | Single |
| Diode Technology | SiC Schottky |
| Diode Type | SiC Schottky |
| Maximum Continuous Forward Current | 4.5A |
| Maximum Forward Voltage Drop | 3V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Peak Non-Repetitive Forward Surge Current | 18.8A |
| Peak Reverse Repetitive Voltage | 1200V |
| Pin Count | 3 |
| Rectifier Type | Schottky Diode |
| Automotive | Unknown |
| Configuration | Single Dual Cathode |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Material | SiC |
| Maximum Continuous Forward Current (A) | 9 |
| Maximum DC Reverse Voltage (V) | 1200 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 60000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Part Status | Active |
| PCB changed | 2 |
| Peak Forward Voltage (V) | 1.8@2A |
| Peak Non-Repetitive Surge Current (A) | 19 |
| Peak Reverse Current (uA) | 50 |
| Peak Reverse Repetitive Voltage (V) | 1200 |
| PPAP | Unknown |
| Supplier Package | TO-252 |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Type | Schottky Diode |
| Вес, г | 0.34 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 695 КБ
Datasheet C4D02120E
pdf, 539 КБ
Datasheet C4D02120E
pdf, 801 КБ
Диоды импортные
pdf, 304 КБ
Дополнительная информация
Калькуляторы группы «Диоды Шоттки»
Типы корпусов импортных диодов
Сроки доставки
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