R6024ENJTL, MOSFETs 10V Drive Nch MOSFET
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Описание
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Super Junction-MOS EN & KN Series MOSFETsROHM Semiconductor Super Junction-MOS EN and KN Series MOSFETs combine the low-noise characteristics of planar MOSFETs and the low ON-resistance characteristics of Super Junction MOSFETs. The EN Series is offered in 600V and 650V versions, and is recommended for power supply circuits requiring noise countermeasures. The fast switching KN Series is offered in 600V, 650V, and 800V variants, and is recommended for power supply circuits demanding lower loss and greater efficiency.
Технические параметры
Brand: | ROHM Semiconductor |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 50 ns |
Id - Continuous Drain Current: | 24 A |
Manufacturer: | ROHM Semiconductor |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-263-3 |
Part # Aliases: | R6024ENJ |
Pd - Power Dissipation: | 245 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 70 nC |
Rds On - Drain-Source Resistance: | 150 mOhms |
Rise Time: | 50 ns |
Series: | Super Junction-MOS EN |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 180 ns |
Typical Turn-On Delay Time: | 35 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Channel Mode | Enhancement |
Channel Type | N |
Forward Diode Voltage | 1.5V |
Maximum Continuous Drain Current | 24 A |
Maximum Drain Source Resistance | 320 mΩ |
Maximum Drain Source Voltage | 600 V |
Maximum Gate Source Voltage | ±30 V |
Maximum Gate Threshold Voltage | 4V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 245 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | D2PAK(TO-263) |
Pin Count | 3 |
Series | R6024ENJ |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 70 nC @ 10 V |
Width | 9.2mm |
Вес, г | 3.95 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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