R6024ENJTL, MOSFETs 10V Drive Nch MOSFET

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987 шт., срок 5-7 недель
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Альтернативные предложения1
Номенклатурный номер: 8006256148
Артикул: R6024ENJTL
Бренд: Rohm

Описание

Unclassified
Super Junction-MOS EN & KN Series MOSFETs
ROHM Semiconductor Super Junction-MOS EN and KN Series MOSFETs combine the low-noise characteristics of planar MOSFETs and the low ON-resistance characteristics of Super Junction MOSFETs. The EN Series is offered in 600V and 650V versions, and is recommended for power supply circuits requiring noise countermeasures. The fast switching KN Series is offered in 600V, 650V, and 800V variants, and is recommended for power supply circuits demanding lower loss and greater efficiency.

Технические параметры

Brand: ROHM Semiconductor
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 1000
Fall Time: 50 ns
Id - Continuous Drain Current: 24 A
Manufacturer: ROHM Semiconductor
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: TO-263-3
Part # Aliases: R6024ENJ
Pd - Power Dissipation: 245 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 70 nC
Rds On - Drain-Source Resistance: 150 mOhms
Rise Time: 50 ns
Series: Super Junction-MOS EN
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 180 ns
Typical Turn-On Delay Time: 35 ns
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Channel Mode Enhancement
Channel Type N
Forward Diode Voltage 1.5V
Maximum Continuous Drain Current 24 A
Maximum Drain Source Resistance 320 mΩ
Maximum Drain Source Voltage 600 V
Maximum Gate Source Voltage ±30 V
Maximum Gate Threshold Voltage 4V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 245 W
Minimum Gate Threshold Voltage 2V
Minimum Operating Temperature -55 °C
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type D2PAK(TO-263)
Pin Count 3
Series R6024ENJ
Transistor Configuration Single
Typical Gate Charge @ Vgs 70 nC @ 10 V
Width 9.2mm
Вес, г 3.95

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 114 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов

Сроки доставки

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