C3M0075120K, SiC MOSFETs SIC MOSFET 1200V 75 mOhm
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см. техническую документацию
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Альтернативные предложения2
Описание
Unclassified
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing.
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 30 A |
Maximum Drain Source Resistance | 75 mΩ |
Maximum Drain Source Voltage | 1200 V |
Maximum Gate Source Voltage | -8 V, 19 V |
Maximum Gate Threshold Voltage | 3.6V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 113.6 W |
Minimum Gate Threshold Voltage | 1.8V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-247-4 |
Pin Count | 4 |
Transistor Configuration | Single |
Transistor Material | SiC |
Typical Gate Charge @ Vgs | 53 nC @ 4/15V |
Width | 5.21mm |
Automotive | Unknown |
Configuration | Single Dual Source |
ECCN (US) | EAR99 |
Lead Shape | Through Hole |
Material | SiC |
Maximum Continuous Drain Current (A) | 32 |
Maximum Drain Source Resistance (mOhm) | 90@15V |
Maximum Drain Source Voltage (V) | 1200 |
Maximum Gate Source Leakage Current (nA) | 250 |
Maximum Gate Source Voltage (V) | 15 |
Maximum Gate Threshold Voltage (V) | 3.6 |
Maximum IDSS (uA) | 50 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 15 |
Maximum Power Dissipation (mW) | 113600 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 123 |
Minimum Gate Threshold Voltage (V) | 1.8 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Operating Junction Temperature (°C) | -55 to 150 |
Packaging | Tube |
Part Status | Active |
PCB changed | 4 |
PPAP | Unknown |
Process Technology | C3M |
Product Category | Power MOSFET |
Standard Package Name | TO |
Supplier Package | TO-247 |
Supplier Temperature Grade | Industrial |
Tab | Tab |
Typical Diode Forward Voltage (V) | 4.5 |
Typical Drain Source Resistance @ 25°C (mOhm) | 75@15V |
Typical Fall Time (ns) | 10 |
Typical Gate Charge @ Vgs (nC) | 53@15V |
Typical Gate Plateau Voltage (V) | 7.5 |
Typical Gate Threshold Voltage (V) | 2.5 |
Typical Gate to Drain Charge (nC) | 18 |
Typical Gate to Source Charge (nC) | 17 |
Typical Input Capacitance @ Vds (pF) | 1390@1000V |
Typical Output Capacitance (pF) | 58 |
Typical Reverse Recovery Charge (nC) | 254 |
Typical Reverse Recovery Time (ns) | 20 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 2@1000V |
Typical Rise Time (ns) | 14 |
Typical Turn-Off Delay Time (ns) | 38 |
Typical Turn-On Delay Time (ns) | 30 |
Вес, г | 5 |
Техническая документация
Datasheet
pdf, 826 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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