R6020ENX, MOSFETs 10V Drive Nch MOSFET

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67 шт., срок 5-7 недель

1 000 руб.

от 10 шт. — 790 руб.

от 25 шт. — 728 руб.

1 шт. на сумму 1 000 руб.

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Альтернативные предложения1

Номенклатурный номер: 8006407389

Артикул: R6020ENX

Бренд: Rohm

Unclassified

N-канал 600V 20A (Tc) 50W (Tc) сквозное отверстие TO-220FM

Base Product Number	R6020 ->
Current - Continuous Drain (Id) @ 25В°C	20A (Tc)
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	150В°C (TJ)
Other Related Documents	http://rohmfs.rohm.com/en/techdata_basic/transisto
Package	Bulk
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	50W (Tc)
Rds On (Max) @ Id, Vgs	196mOhm @ 10A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Simulation Models	http://rohmfs.rohm.com/en/products/library/spice/d
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 1mA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Resistance	200 mΩ
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	50 W
Number of Elements per Chip	1
Package Type	TO-220FM
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	60 nC @ 10 V
Width	4.8mm
Вес, г	1