FDPF3860T
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310 руб.
от 2 шт. —
210 руб.
от 5 шт. —
150 руб.
1 шт.
на сумму 310 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, N CH, 100V, 20A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0291ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V
Технические параметры
Brand | ON Semiconductor/Fairchild |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 50 |
Fall Time | 7 ns |
Height | 16.07 mm |
Id - Continuous Drain Current | 20 A |
Length | 10.36 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-220FP-3 |
Packaging | Tube |
Pd - Power Dissipation | 33.8 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 38.2 mOhms |
Rise Time | 17 ns |
RoHS | Details |
Series | FDPF3860T |
Technology | Si |
Tradename | PowerTrench |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 24 ns |
Typical Turn-On Delay Time | 15 ns |
Unit Weight | 0.080072 oz |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs - Gate-Source Voltage | 20 V |
Width | 4.9 mm |
Automotive | No |
Channel Type | N |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Through Hole |
Maximum Continuous Drain Current (A) | 20 |
Maximum Drain Source Resistance (mOhm) | 38.2@10V |
Maximum Drain Source Voltage (V) | 100 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4.5 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 33800 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | TMOS |
Standard Package Name | TO |
Supplier Package | TO-220FP |
Tab | Tab |
Typical Fall Time (ns) | 7 |
Typical Gate Charge @ 10V (nC) | 23 |
Typical Gate Charge @ Vgs (nC) | 23@10V |
Typical Input Capacitance @ Vds (pF) | 1350@25V |
Typical Rise Time (ns) | 17 |
Typical Turn-Off Delay Time (ns) | 24 |
Typical Turn-On Delay Time (ns) | 15 |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 7 ns |
Id - Continuous Drain Current: | 20 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 33.8 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 35 nC |
Rds On - Drain-Source Resistance: | 38.2 mOhms |
Rise Time: | 17 ns |
Series: | FDPF3860T |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | PowerTrench |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 24 ns |
Typical Turn-On Delay Time: | 15 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Вес, г | 3.5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов