FCH067N65S3-F155
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см. техническую документацию
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2 850 руб.
от 2 шт. —
2 660 руб.
от 5 шт. —
2 530 руб.
от 10 шт. —
2 437.50 руб.
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на сумму 2 850 руб.
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от 714 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, N CHANNEL, 650V, 44A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 44A(Tc) |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | Super Junction |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3090pF @ 400V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 312W(Tc) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 22A, 10V |
| Series | SuperFETВ® III |
| Supplier Device Package | TO-247 Long Leads |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 4.4mA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Id - Continuous Drain Current: | 44 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | FCH067N65S3_F155 |
| Pd - Power Dissipation: | 312 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 78 nC |
| Rds On - Drain-Source Resistance: | 67 mOhms |
| Series: | FCH067N65S3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperFET III |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 44 A |
| Maximum Drain Source Resistance | 67 mΩ |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 312 W |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 78 nC @ 10 V |
| Width | 4.82mm |
| Вес, г | 0.1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
