2N6123 PBFREE

431 шт., срок 6-8 недель

640 руб.

от 50 шт. — 440 руб.

от 100 шт. — 359 руб.

1 шт. на сумму 640 руб.

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Номенклатурный номер: 8006595656

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - Single

Биполярный (BJT) транзистор NPN 80V 4A 2.5MHz 40W Through Hole TO-220

Current - Collector (Ic) (Max)	4A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 1.5A, 2V
ECCN	EAR99
Frequency - Transition	2.5MHz
HTSUS	8541.29.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-220-3
Power - Max	40W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.4V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max)	80V