R6024KNX, MOSFETs Nch 600V 24A Si MOSFET
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487 шт., срок 5-7 недель
800 руб.
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610 руб.
от 100 шт. —
441 руб.
от 250 шт. —
435.74 руб.
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Описание
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Super Junction-MOS EN & KN Series MOSFETsROHM Semiconductor Super Junction-MOS EN and KN Series MOSFETs combine the low-noise characteristics of planar MOSFETs and the low ON-resistance characteristics of Super Junction MOSFETs. The EN Series is offered in 600V and 650V versions, and is recommended for power supply circuits requiring noise countermeasures. The fast switching KN Series is offered in 600V, 650V, and 800V variants, and is recommended for power supply circuits demanding lower loss and greater efficiency.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 6.5 S |
| Id - Continuous Drain Current: | 24 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Bulk |
| Part # Aliases: | R6024KNXC7G |
| Pd - Power Dissipation: | 74 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 45 nC |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| Rise Time: | 50 ns |
| Series: | Super Junction-MOS KN |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 60 ns |
| Typical Turn-On Delay Time: | 30 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Base Product Number | R6024 -> |
| Current - Continuous Drain (Id) @ 25В°C | 24A (Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Other Related Documents | http://rohmfs.rohm.com/en/techdata_basic/transisto |
| Package | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 74W (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 11.3A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Simulation Models | http://rohmfs.rohm.com/en/products/library/spice/d |
| Supplier Device Package | TO-220FM |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Вес, г | 1.95 |
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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