FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

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Номенклатурный номер: 8014597087

Артикул: FGH40T120SMD

Semiconductors\Discrete Semiconductors\IGBTs

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.

Channel Type	N
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	80 A
Maximum Gate Emitter Voltage	±25V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	555 W
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Package Type	TO-247
Pin Count	3
Transistor Configuration	Single
Brand:	onsemi/Fairchild
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.8 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Factory Pack Quantity: Factory Pack Quantity:	30
Gate-Emitter Leakage Current:	+/-400 nA
Manufacturer:	onsemi
Maximum Gate Emitter Voltage:	-25 V, 25 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Operating Temperature Range:	-55 C to+175 C
Package/Case:	TO-247-3L
Packaging:	Tube
Pd - Power Dissipation:	555 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
REACH - SVHC:	Details
Series:	FGH40T120SMD
Subcategory:	IGBTs
Technology:	Si