FDMB2308PZ
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см. техническую документацию
см. техническую документацию
600 руб.
от 2 шт. —
500 руб.
от 5 шт. —
426 руб.
от 10 шт. —
395 руб.
1 шт.
на сумму 600 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
Small Signal Field-Effect Transistor, 2-Element, P-Channel, MOSFET, MO-229
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 7(A) |
| Drain-Source On-Volt | 20(V) |
| Gate-Source Voltage (Max) | '±12(V) |
| Mounting | Surface Mount |
| Number of Elements | 2 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | WDFN EP |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Polarity | P |
| Power Dissipation | 2.2(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 58 ns |
| Forward Transconductance - Min: | 29 S |
| Id - Continuous Drain Current: | 7 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | MicroFET-6 |
| Pd - Power Dissipation: | 2.2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 36 mOhms |
| Rise Time: | 33 ns |
| Series: | FDMB2308PZ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 2 P-Channel |
| Typical Turn-Off Delay Time: | 74 ns |
| Typical Turn-On Delay Time: | 14 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Channel Type | P |
| Maximum Continuous Drain Current | 7 A |
| Maximum Drain Source Resistance | 50 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2.2 W, 800 mW |
| Minimum Gate Threshold Voltage | 0.6V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Series | PowerTrench |
| Transistor Configuration | Common Drain |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 22 nC @ 4.5 V |
| Width | 2mm |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
