VEMT2023X01
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см. техническую документацию
см. техническую документацию
220 руб.
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Описание
Электроэлемент
PHOTO TRANSISTOR, NPN, SMD, Wavelength Typ:860nm, Viewing Angle:70 , Power Consumption:-, No. of Pins:2Pins, Transistor Case Style:SMD, Packaging:Cut Tape, Product Range:-, Automotive Qualification Standard:-, MSL:MSL 2A - 4 wee , RoHS Compliant: Yes
Технические параметры
Automotive | Yes |
Fabrication Technology | NPN |
Half Intensity Angle Degrees - (??) | 35 |
Maximum Collector Current - (mA) | 50 |
Maximum Collector-Emitter Saturation Voltage - (V) | 0.4 |
Maximum Collector-Emitter Voltage - (V) | 20 |
Maximum Dark Current - (nA) | 100 |
Maximum Emitter-Collector Voltage - (V) | 7 |
Maximum Light Current - (uA) | 4100 |
Maximum Power Dissipation - (mW) | 100 |
Military | No |
Operating Temperature - (??C) | -40~100 |
Packaging | Tape and Reel |
Peak Wavelength - (nm) | 860 |
Pin Count | 2 |
Polarity | NPN |
Standard Package Name | SMD |
Supplier Package | SMD |
Viewing Orientation | Top View |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Half Intensity Angle Degrees (°) | 35 |
Lens Shape Type | Domed |
Material | Silicon |
Maximum Collector Current (mA) | 50 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
Maximum Collector-Emitter Voltage (V) | 20 |
Maximum Dark Current (nA) | 100 |
Maximum Emitter-Collector Voltage (V) | 7 |
Maximum Light Current (uA) | 4100 |
Maximum Operating Temperature (°C) | 100 |
Maximum Power Dissipation (mW) | 100 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Surface Mount |
Part Status | Active |
PCB changed | 2 |
Peak Wavelength (nm) | 860 |
Phototransistor Type | Phototransistor |
PPAP | Unknown |
Type | Chip |
Техническая документация
Datasheet VEMT2023X01
pdf, 204 КБ
Документация
pdf, 199 КБ