CSD17301Q5A

CSD17301Q5A
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см. техническую документацию
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Номенклатурный номер: 8007548045
Бренд: Texas Instruments

Описание

Texas Instruments NexFET™ Power MOSFET The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.

Технические параметры

Brand: Texas Instruments
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 2500
Fall Time: 10.5 ns
Id - Continuous Drain Current: 100 A
Manufacturer: Texas Instruments
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: VSONP-8
Pd - Power Dissipation: 3.2 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 19 nC
Rds On - Drain-Source Resistance: 3 mOhms
Rise Time: 16.2 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: Driver
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Voltage: -8 V, +10 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
Вес, г 6

Техническая документация

Datasheet
pdf, 385 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов