CSD17309Q3
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Описание
Texas Instruments NexFET™ Power MOSFET
The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Development Kit: | DLPDLCR4710EVM-G2, TPS65982-EVM, TPS65983EVM |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 3.6 ns |
| Forward Transconductance - Min: | 67 S |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 2.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 7.5 nC |
| Rds On - Drain-Source Resistance: | 5.4 mOhms |
| Rise Time: | 9.9 ns |
| Series: | CSD17309Q3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Power MOSFET |
| Typical Turn-Off Delay Time: | 13.2 ns |
| Typical Turn-On Delay Time: | 6.1 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 3.6 ns |
| Height | 1 mm |
| Id - Continuous Drain Current | 60 A |
| Length | 3.3 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-Clip-8 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 2.8 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 7.5 nC |
| Rds On - Drain-Source Resistance | 6.3 mOhm |
| Rise Time | 9.9 ns |
| RoHS | Details |
| Series | CSD17309Q3 |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | Power MOSFET |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Width | 3.3 mm |
Техническая документация
Datasheet CSD17309Q3
pdf, 440 КБ
Документация
pdf, 411 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
