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C3M0021120K, SiC MOSFETs 1.2kV 21mOHMS G3 SiC MOSFET

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3243 шт., срок 5-7 недель

9 350 руб.

от 10 шт. — 8 070 руб.

от 30 шт. — 6 820 руб.

от 60 шт. — 6 737.25 руб.

1 шт. на сумму 9 350 руб.

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от 2 339 руб. × 4 платежа

Альтернативные предложения1

Номенклатурный номер: 8008294546

Артикул: C3M0021120K

Бренд: WOLFSPEED

Описание

Unclassified

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency.

Технические параметры

Automotive	Unknown
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Dual Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Material	SiC
Maximum Continuous Drain Current (A)	100
Maximum Drain Source Resistance (mOhm)	28.8@15V
Maximum Drain Source Voltage (V)	1200
Maximum Gate Source Voltage (V)	19
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	469000
Minimum Operating Temperature (°C)	-40
Mounting	Through Hole
Number of Elements per Chip	1
Part Status	Active
PCB changed	4
Pin Count	4
PPAP	Unknown
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-247
Tab	Tab
Typical Fall Time (ns)	14
Typical Gate Charge @ Vgs (nC)	162@15V
Typical Input Capacitance @ Vds (pF)	4818@1000V
Typical Rise Time (ns)	33
Typical Turn-Off Delay Time (ns)	57
Typical Turn-On Delay Time (ns)	29
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	1200 V
Mounting Type	Through Hole
Package Type	TO 247
Вес, г	6