FFSH2065A
см. техническую документацию
от 509 руб. × 4 платежа
Описание
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
• Max Junction Temperature 175°C
• AEC-Q101 qualified
• Avalanche Rated 200 mJ
• No Reverse Recovery/No Forward Recovery
• Ease of Paralleling
• High Surge Current Capacity
• Positive Temperature Coefficient
Технические параметры
| Average Forward Current | 20А |
| Repetitive Peak Reverse Voltage | 650В |
| Количество Выводов | 2 Вывода |
| Максимальная Рабочая Температура | 175 C |
| Полный Емкостной Заряд Qc | 64нКл |
| Стиль Корпуса Диода | TO-247 |
| Тип Монтажа Диода | Сквозное Отверстие |
| Diode Configuration | Single |
| Diode Technology | SiC Schottky |
| Diode Type | SiC Schottky |
| Maximum Continuous Forward Current | 25A |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247 |
| Peak Non-Repetitive Forward Surge Current | 1.1kA |
| Peak Reverse Repetitive Voltage | 650V |
| Pin Count | 2 |
| Rectifier Type | Schottky Diode |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Диоды Шоттки»
Типы корпусов импортных диодов
