BSM120D12P2C005, НПН-коп. 50В 0,1А 0,2Вт SOT322

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4 шт., срок 6 недель

Бесплатная доставка 5Post, СДЭК и Я.Доставка

93 990 руб.

от 4 шт. — 78 220 руб.

1 шт. на сумму 93 990 руб.

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Альтернативные предложения1

Номенклатурный номер: 8008518353

Артикул: BSM120D12P2C005

Бренд: Rohm

Описание НПН-коп. 50В 0,1А 0,2Вт SOT322 Характеристики

Brand:	ROHM Semiconductor
Configuration:	Half-Bridge
Factory Pack Quantity:	12
Fall Time:	60 ns
Id - Continuous Drain Current:	134 A
Manufacturer:	ROHM Semiconductor
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Screw Mount
Number of Channels:	1 Channel
Package/Case:	Module
Packaging:	Bulk
Pd - Power Dissipation:	935 W
Product Category:	Discrete Semiconductor Modules
Product Type:	Discrete Semiconductor Modules
Product:	Power MOSFET Modules
Rise Time:	50 ns
Subcategory:	Discrete Semiconductor Modules
Technology:	SiC
Transistor Polarity:	N-Channel
Type:	SiC Power Module
Typical Delay Time:	45 ns
Typical Turn-Off Delay Time:	170 ns
Typical Turn-On Delay Time:	45 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	-6 V, +22 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Vr - Reverse Voltage:	1.2 kV
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	1200 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	935 W
Minimum Gate Threshold Voltage	1.6V
Minimum Operating Temperature	-40 °C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	C
Pin Count	4
Series	BSM
Transistor Material	SiC
Width	45.6mm
Вес, г	150