RJU003N03FRAT106
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29381 шт., срок 6-8 недель
130 руб.
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86 руб.
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Описание
AEC-Q101 Automotive MOSFETs
ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100V DSS to 100V DSS. These MOSFETs offer a drain-current ranging from -25A to 40A and R DS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.
ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100V DSS to 100V DSS. These MOSFETs offer a drain-current ranging from -25A to 40A and R DS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 32 ns |
| Forward Transconductance - Min: | 400 mS |
| Id - Continuous Drain Current: | 300 mA |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-323-3 |
| Part # Aliases: | RJU003N03FRA |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 1.1 Ohms |
| Rise Time: | 4 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 9 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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