FQD7P20TM
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420 руб.
от 2 шт. —
320 руб.
от 5 шт. —
251 руб.
от 10 шт. —
225.54 руб.
1 шт.
на сумму 420 руб.
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Описание
Электроэлемент
Описание Транзистор P-MOSFET, полевой, -200В, -3,6А, 55Вт, DPAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 5.7A(Tc) |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 25V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 2.5W(Ta), 55W(Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 2.85A, 10V |
| Series | QFETВ® |
| Supplier Device Package | D-Pak |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 42 ns |
| Forward Transconductance - Min: | 3.7 S |
| Id - Continuous Drain Current: | 5.7 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3(TO-252-3) |
| Part # Aliases: | FQD7P20TM_NL |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 25 nC |
| Rds On - Drain-Source Resistance: | 690 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 110 ns |
| Series: | FQD7P20 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 30 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 5.7 A |
| Maximum Drain Source Resistance | 690 mΩ |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 55 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Width | 6.22mm |
| Вес, г | 0.426 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
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Datasheet
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Datasheet
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Документация
pdf, 954 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
