EFC8811R-TF
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Описание
Электроэлемент
Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 27(A) |
| Drain-Source On-Volt | 12(V) |
| Gate-Source Voltage (Max) | '±8(V) |
| Mounting | Surface Mount |
| Number of Elements | 2 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | CSP |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Polarity | N |
| Power Dissipation | 2.5(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Brand: | onsemi |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 17.7 us |
| Id - Continuous Drain Current: | 27 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | CSP-6 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 100 nC |
| Rds On - Drain-Source Resistance: | 6.3 mOhms |
| Rise Time: | 570 ns |
| Series: | EFC8811R |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 38 us |
| Typical Turn-On Delay Time: | 80 ns |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Automotive | No |
| Channel Type | N |
| Configuration | Dual |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 27 |
| Maximum Drain Source Resistance (mOhm) | 3.2@4.5V |
| Maximum Drain Source Voltage (V) | 12 |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 1.3 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Number of Elements per Chip | 2 |
| Part Status | LTB |
| PCB changed | 6 |
| PPAP | No |
| Product Category | Power MOSFET |
| Supplier Package | CSP |
| Typical Fall Time (ns) | 17700 |
| Typical Gate Charge @ Vgs (nC) | 100@4.5V |
| Typical Rise Time (ns) | 570 |
| Typical Turn-Off Delay Time (ns) | 38000 |
| Typical Turn-On Delay Time (ns) | 80 |
| Вес, г | 0.06 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
