BSS138W
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см. техническую документацию
см. техническую документацию
100 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
45 руб.
от 10 шт. —
28 руб.
от 100 шт. —
12.98 руб.
2 шт.
на сумму 200 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 50В, 0,21А, 0,34Вт, SOT323 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Base Part Number | BSS138 |
| Current - Continuous Drain (Id) @ 25В°C | 210mA(Ta) |
| Drain to Source Voltage (Vdss) | 50V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.1nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 38pF @ 25V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | SC-70, SOT-323 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 340mW(Ta) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 220mA, 10V |
| Series | - |
| Supplier Device Package | SC-70(SOT323) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 200 mA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-323-3 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 1.1 nC |
| Rds On - Drain-Source Resistance: | 6 Ohms |
| Series: | BSS138W |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.4V |
| Maximum Continuous Drain Current | 210 mA |
| Maximum Drain Source Resistance | 6 Ω |
| Maximum Drain Source Voltage | 50 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 340 mW |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | SOT-323 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 1.1 nC @ 10 V |
| Width | 1.25mm |
| Вес, г | 0.0605 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 172 КБ
Datasheet BSS138W
pdf, 351 КБ
Datasheet BSS138W
pdf, 212 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
