IXYH25N250CHV IGBT, 95 A 2500 V, 3-Pin TO247HV, Through Hole
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat)
Технические параметры
Maximum Collector Emitter Voltage | 2500 V |
Maximum Continuous Collector Current | 95 A |
Maximum Gate Emitter Voltage | ±20 V, ±30V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 937 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Transistors | 1 |
Package Type | TO247HV |
Pin Count | 3 |
Transistor Configuration | Single |
Brand: | IXYS |
Collector- Emitter Voltage VCEO Max: | 2500 V |
Collector-Emitter Saturation Voltage: | 3.4 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 95 A |
Continuous Collector Current Ic Max: | 95 A |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Gate-Emitter Leakage Current: | +/-100 nA |
Manufacturer: | IXYS |
Maximum Gate Emitter Voltage: | 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package/Case: | TO-247PLUS-HV-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 937 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | High Voltage |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 50 |
Техническая документация
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