RMB2S-E3/45, Bridge Rectifier, 800mA, 200V, 4-Pin
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Описание
Semiconductors\Discrete Semiconductors\Bridge Rectifiers
Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier Fast recovery, low switching loss
Технические параметры
| Bridge Type | Single Phase |
| Configuration | Single |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | TO-269AA |
| Peak Average Forward Current | 800mA |
| Peak Forward Voltage | 1.25V |
| Peak Non-Repetitive Forward Surge Current | 30A |
| Peak Reverse Current | 5µA |
| Peak Reverse Repetitive Voltage | 200V |
| Pin Count | 4 |
| Width | 4.1mm |
| Base Product Number | RMB2 -> |
| Current - Average Rectified (Io) | 500mA |
| Current - Reverse Leakage @ Vr | 5ВµA @ 200V |
| Diode Type | Standard |
| ECCN | EAR99 |
| HTSUS | 8541.10.0070 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-269AA, 4-BESOP |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-269AA (MBS) |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 400mA |
| Voltage - Peak Reverse (Max) | 200V |
| Diode Technology | Silicon Junction |
| Вес, г | 5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Диодные мосты»
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