IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses.
Технические параметры
| Channel Type | N |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 225 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 1150 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Package Type | PLUS247 |
| Pin Count | 3 |
| Switching Speed | 30kHz |
| Transistor Configuration | Single |
| California Prop 65 | Warning Information |
| Current - Collector (Ic) (Max) | 225A |
| Current - Collector Pulsed (Icm) | 530A |
| ECCN | EAR99 |
| Gate Charge | 250nC |
| HTSUS | 8541.29.0095 |
| IGBT Type | PT |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power - Max | 1150W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | GenX3в„ў, XPTв„ў -> |
| Supplier Device Package | PLUS247в„ў-3 |
| Switching Energy | 7.7mJ (on), 7.1mJ (off) |
| Td (on/off) @ 25В°C | 30ns/153ns |
| Test Condition | 600V, 100A, 1Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 100A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Вес, г | 3 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем
