IXYH40N120C3 IGBT, 70 A 1200 V, 3-Pin TO-247, Through Hole
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses.
Технические параметры
| Channel Type | N |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 70 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 577 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Package Type | TO-247 |
| Pin Count | 3 |
| Switching Speed | 50kHz |
| Transistor Configuration | Single |
| California Prop 65 | Warning Information |
| Current - Collector (Ic) (Max) | 70A |
| Current - Collector Pulsed (Icm) | 115A |
| ECCN | EAR99 |
| Gate Charge | 85nC |
| HTSUS | 8541.29.0095 |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power - Max | 577W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | GenX3в„ў, XPTв„ў -> |
| Supplier Device Package | TO-247 (IXYH) |
| Switching Energy | 3.9mJ (on), 660ВµJ (off) |
| Td (on/off) @ 25В°C | 24ns/125ns |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Вес, г | 3 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем
