FDS6681Z

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770 руб.

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Номенклатурный номер: 8010084525

Электроэлемент

Описание Транзистор P-MOSFET, полевой, -30В, -20А, 2,5Вт, SO8, PowerTrench® Характеристики

Channel Mode	Enhancement
Maximum Continuous Drain Current	20A
Maximum Drain Source Resistance	0.0046?
Maximum Drain Source Voltage	30V
Maximum Gate Source Voltage	±25V
Minimum Operating Temperature	-55°C
Number of Elements per Chip	1
Pin Count	8
Product Height	1.5mm
Product Length	5mm
Product Width	3.99mm
Supplier Package	SOIC N
Typical Fall Time	380ns
Typical Rise Time	9ns
Typical Turn-Off Delay Time	660ns
Typical Turn-On Delay Time	20ns
конфигурация	Single; Quad Drain, Triple Source
максимальная рабочая температура	150°C
монтаж (установка)	Surface Mount
разрешение	Power MOSFET
Channel Type	P
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Package Type	SOIC
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	185 nC @ 10 V
Width	4mm
Case	SO8
Drain current	-20A
Drain-source voltage	-30V
Gate charge	260nC
Gate-source voltage	±25V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	ONSEMI
Mounting	SMD
On-state resistance	6.5mΩ
Polarisation	unipolar
Power dissipation	2.5W
Technology	PowerTrench®
Type of transistor	P-MOSFET
Вес, г	0.125